![]() Ravariu, C.: Vacuum nano-triode in nothing-on-insulator configuration working in terahertz domain. Han, J., Meyyappan, M.: The device made of nothing. ![]() Srisonphan, S., Jung, Y.S., Kim, H.K.: Metal-oxide-semiconductor field-effect transistor with a vacuum channel. Leitenstorfer, A., Hunsche, S., Shah, J., Nuss, M.C., Knox, W.H.: Femtosecond high-field transport in compound semiconductors. īooske, J.H., Dobbs, R.J., Joye, C.D., Kory, C.L., Neil, G.R., Park, G.-S., Park, J., Temkin, R.J.: Vacuum electronic high power terahertz sources. Stoner, B.R., Glass, J.T.: Nothing is like a vacuum. Gaertner, G.: Historical development and future trends of vacuum electronics. Kim, H.K.: Vacuum transistors for space travel. Trucchi, D.M., Melosh, N.A.: Electron-emission materials: advances, applications, and models. The introduced modification could be applied to other vacuum vertical-channel transistors to provide a new class of high-speed low-power transistors for digital applications. Other electrical characteristics of the FGVFET, such as the on–off current ratio and transconductance, are also calculated. As a result, a significant cutoff frequency ( f T) of 1.13 THz is obtained. Also, this vacuum transistor exhibits a low threshold voltage (0.55 V) that is comparable to modern solid-state devices. Meanwhile, the gate leakage current of the FGVFET is reduced by about sevenfold compared with conventional structures. The proposed three-terminal metal–insulator–metal device with a 43-nm vertical vacuum channel is capable of operating in air ambient and provides a high anode drive current (101 ♚), while both the gate and anode voltages are small at about 5 V. The reduction of the gate leakage current is investigated to obtain an optimum structure. A nanofinger gate vacuum field-emission transistor with a vertical channel (FGVFET) is proposed herein.
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